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| 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 90 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 30 20 80 125 487 20 12.5 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 2.06 mH, IAR = 20 A, RG = 25 W Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2 1 3 1 2002-09-04 2SK3445 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 W ID = 10 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min 3/4 3/4 250 3.0 3/4 5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 90 10 2090 280 1000 20 40 10 40 45 22 23 Max 10 100 3/4 5.0 105 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S VDD ~ 125 V Duty < 1%, tw = 10 ms = VDD ~ 200 V, VGS = 10 V, ID = 20 A Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition 3/4 3/4 3/4 3/4 IDR1 = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 320 2.8 Max 20 80 1 4 -1.5 3/4 3/4 Unit A A A A V ns mC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3445 Type Month (starting from alphabet A) Year (last number of the christian era) RL = 12.5W 2 2002-09-04 2SK3445 ID - VDS 50 Common source Tc = 25C 40 Pulse test 15 10 100 9.5 Common source Tc = 25C 80 Pulse test ID - VDS 15 12 11 (A) ID 30 ID (A) 60 9 8.5 10 Drain current 20 Drain current 8 7.5 40 9 10 VGS = 7 V 20 8 VGS = 7 V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source 40 VDS = 10 V Pulse test 5 VDS - VGS Common source Tc = 25C 4 Pulse test (A) ID Tc = -55C 20 100 10 25 0 0 Drain-source voltage 30 VDS 3 Drain current (V) 2 ID = 20 A 1 10 5 4 8 12 16 20 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 100 Common source VDS = 10 V Pulse test 1 Common source Tc = 25C Pulse test RDS (ON) - ID iYfsi (S) Forward transfer admittance 10 Tc = -55C 100 25 Drain-source on resistance RDS (ON) (mW) 0.1 VGS = 10 V 15 1 0.1 0.1 1 10 100 0.01 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3445 RDS (ON) - Tc (mW) 0.3 Common source VGS = 10 V Pulse test 10 5 0.18 ID = 20 A 1000 Common source IDR - VDS RDS (ON) 0.24 (A) Tc = 25C Pulse test 100 Drain-source on resistance 0.12 Drain reverse current IDR 10 10 VGS = 0 V 0.06 5 0 -80 -40 0 40 80 120 160 1 0 3 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 30000 10000 6 Vth - Tc Gate threshold voltage Vth (V) 5 (pF) Ciss 1000 4 Capacitance C 3 100 Coss Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 100 2 Common source 1V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 Crss 1000 10 0.1 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 250 Dynamic input/output characteristics Common source ID = 20 A Tc = 25C Pulse test 20 (W) (V) 160 200 16 PD VDS Drain power dissipation Drain-source voltage 50 V 100 VGS 50 100 V 8 80 40 4 10 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 120 150 VDD = 200 V 12 VGS (V) VDS 2SK3445 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 m PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1m 10 m 100 m 1 10 Single pulse 100 m Pulse width tw (S) Safe operating area 100 ID max (pulsed) * 100 ms* 1 ms* ID max 10 (continuous) DC operation Tc = 25C 500 EAS - Tch (mJ) Avalanche energy EAS 400 (A) Drain current ID 300 200 1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 100 0.1 1 VDSS max 100 1000 0 25 50 75 100 125 150 10 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o Test circuit RG = 25 W VDD = 50 V, L = 2.06 mH 5 2002-09-04 2SK3445 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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